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2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

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2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

: Large Image : 2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	2SK2996

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	7900pcs

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Detailed Product Description

Gate Leakage Current:	±10 μA	Gate−source Breakdown Voltage:	±30 V
Drain Cut−off Current:	100 μA	Drain−source Breakdown Voltage:	600 V
Gate Threshold Voltage:	2.0 To 4.0 V	Drain−source ON Resistance:	0.74 Ω
Highlight:	npn smd transistor , silicon power transistors

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

L6599D	6828	ST	13+	SOP-16
L7805ABP	12978	ST	11+	TO-220F
L7812CV	60000	STM	14+	TO-220
L78L33ACUTR	38000	ST	15+	SOT-89
L78M05CDT	98000	ST	16+	TO-252
L78M08ABDT-TR	14698	ST	16+	SOT-252
L78M12CDT	101000	ST	13+	TO-252
L78S05CV	11629	ST	16+	TO-220
L78S12CV	4245	ST	16+	TO-220
L7985ATR	13028	STM	15+	HSOP-8
L9407F	3184	ST	15+	ZIP
L9637D013TR	1520	ST	15+	SOP
L9826TR	3101	ST	12+	SOP-20
LA4440	3580	SANYO	13+	ZIP-14
LA78040	15692	SANYO	14+	TO-220
LA78041	14769	SANYO	15+	TO-220
LA78045	16047	SANYO	13+	TO-220-7
LAN83C185-JT	2746	SMSC	16+	QFP64
LAN8710A-EZK-TR	5987	SMSC	13+	QFN32
LAN8710AI-EZK-TR	15547	SMSC	14+	QFN
LAN8720A-CP-TR	4876	MICROCHIP	16+	QFN24
LAN9115-MT	7959	MICROCHIP	09+	QFP
LCDA05.TBT	7787	SEMTECH	11+	SOP-8
LCMXO640C-3TN100C	4897	LATTICE	12+	TQFP100
LCMZO640C-4TN100C	1113	LATTICE	16+	QFP100
LCP02-150B1RL	6643	ST	16+	SOP-8
LD1086D2M33TR	4316	ST	14+	TO-263
LD1086V33	6714	ST	08+	TO-220
LD1117ADT18TR	51000	ST	15+	TO-252
LD1117S18TR	101000	ST	11+	SOT-223

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

(π−MOSV) 2SK2996

DC−DC Converter, Relay Drive and Motor Drive Applications

Low drain−source ON resistance : R_{DS (ON)} = 0.74 Ω (typ.)

High forward transfer admittance : |Y_fs| = 6.8 S (typ.)

Low leakage current : I_DSS = 100 μA (max) (V_DS = 600 V)

Enhancement mode : V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics		Symbol	Rating	Unit
Drain−source voltage		V_DSS	600	V
Drain−gate voltage (R_GS = 20 kΩ)		V_DGR	600	V
Gate−source voltage		V_GSS	±30	V
Drain current	DC (Note 1)	I_D	10	A
Drain current	Pulse (Note 1)	I_DP	30	A
Drain power dissipation (Tc = 25°C)		P_D	45	W
Single pulse avalanche energy (Note 2)		E_AS	252	mJ
Avalanche current		I_AR	10	A
Repetitive avalanche energy (Note 3)		E_AR	4.5	mJ
Channel temperature		Tch	150	°C
Storage temperature range		Tstg	−55~150	°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

2SK2996 3 Pin Transistor N Channel MOS FET NPN Silicon Transistor

Weight: 1.9 g (typ.)

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Contact Person: Miss. Sharon Yang

Tel: 86-755-23616356

Fax: 86-755-23617396