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FQP12N60C600V N-Channel MOSFET switching power mosfet low power mosfet

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FQP12N60C600V N-Channel MOSFET switching power mosfet low power mosfet

Large Image : FQP12N60C600V N-Channel MOSFET switching power mosfet low power mosfet

Product Details:

Place of Origin:	Original
Brand Name:	FAIRCHILD
Certification:	Original Factory Pack
Model Number:	FQP12N60C600V

Payment & Shipping Terms:

Minimum Order Quantity:	5pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	290PCS

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Detailed Product Description

Drain-Source Voltage:	600 V	Drain Current:	12 * A
Drain Current:	48 A	Gate-Source Voltage:	± 30 V
Single Pulsed Avalanche Energy:	870 MJ
Highlight:	power mosfet ic , multi emitter transistor

FQP12N60C/FQPF12N60C 600V N-Channel MOSFET

FQP12N60C600V N-Channel MOSFET switching power mosfet low power mosfet Features

• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V

• Low gate charge ( typical 48 nC)

• Low Crss ( typical 21 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

FQP12N60C600V N-Channel MOSFET switching power mosfet low power mosfet

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