4N37 Electronic IC Chips Standard Single Channel DIP Optocoupler

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Industry Standard Single Channel 6 Pin DIP Optocoupler

FEATURES

• Interfaces with Common Logic Families

• Input-output Coupling Capacitance < 0.5 pF

• Industry Standard Dual-in-line 6-pin Package

• Field Effect Stable by TRIOS®

• 5300 VRMS Isolation Test Voltage

• Underwriters Laboratory File #E52744

• VDE #0884 Approval Available with Option 1

APPLICATIONS

• AC Mains Detection

• Reed Relay Driving

• Switch Mode Power Supply Feedback

• Telephone Ring Detection

• Logic Ground Isolation

• Logic Coupling with High Frequency Noise Rejection 

DESCRIPTION

This data sheet presents five families of Vishay Industry Standard Single Channel Phototransistor Couplers. These families include the 4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/ A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/ 277 devices.Each optocoupler consists of Gallium Arsenide infrared LED and a silicon NPN phototransistor.

These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 V_RMS Isolation Test Voltage. This isolation performance is accomplished through Vishay double molding isolation manufacturing process. Compliance to VDE 0884 partial discharge isolation specification is available for these families by ordering option 1.

Phototransistor gain stability, in the presence of high isolation voltages, is insured by incorporating a TRansparent lOn Shield (TRIOS)® on the phototransistor substrate. These isolation processes and the Vishay IS09001 Quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler.

The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.

Maximum Ratings T_A=25°C

Emitter

Reverse Voltage .......................................................................................... 6.0 V

Forward Current ........................................................................................ 60 mA

Surge Current (t≤10 µs)............................................................................... 2.5 A

Power Dissipation................................................................................... 100 mW

Detector

Collector-Emitter Breakdown Voltage........................................................... 70 V

Emitter-Base Breakdown Voltage................................................................ 7.0 V

Collector Current ....................................................................................... 50 mA

Collector Current(t <1.0 ms).................................................................... 100 mA

Power Dissipation................................................................................... 150 mW

Package

Isolation Test Voltage.......................................................................... 5300 V_RMS

Creepage .............................................................................................. ≥7.0 mm

Clearance ............................................................................................. ≥7.0 mm

Isolation Thickness between Emitter and Detector............................... ≥0.4 mm

Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175

Isolation Resistance

    V_IO=500 V, T_A=25°C...............................................................................10¹² Ω

    V_IO=500 V, T_A=100°C............................................................................ 10¹¹ Ω

Storage Temperature................................................................ –55°C to +150°C

Operating Temperature ............................................................ –55°C to +100°C

Junction Temperature................................................................................ 100°C

Soldering Temperature (max. 10 s, dip soldering:

    distance to seating plane ≥1.5 mm) ...................................................... 260°C