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GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR

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GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR

: Large Image : GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	GP4068D

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8700pcs

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Detailed Product Description

Collector-to-Emitter Voltage:	600 V	Continuous Collector Current:	96 A
Pulse Collector Current:	192 A	Maximum Power Dissipation:	330 W
Operating Junction Temperature:	-55 To +175°C	Storage Temperature:	-55 To +175°C
Highlight:	multi emitter transistor , silicon power transistors

IRGP4068DPbF

IRGP4068D-EPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

Features

• Low V_{CE (ON)} Trench IGBT Technology

• Low Switching Losses

• Maximum Junction temperature 175 °C

• 5 µS short circuit SOA

• Square RBSOA

• 100% of the parts tested for 4X rated current (I_LM)

• Positive V_{CE (ON)} Temperature co-efficient

• Ultra-low V_F Hyperfast Diode

• Tight parameter distribution

• Lead Free Package

Benefits

• Device optimized for induction heating and soft switching applications

• High Efficiency due to Low V_CE(on), Low Switching Losses and Ultra-low V_F

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI

Absolute Maximum Ratings

	Parameter	Max	Units
V_CES	Collector-to-Emitter Voltage	600	V
I_C @ T_C= 25°C	Continuous Collector Current	96	A
I_C @ T_C = 100°C	Continuous Collector Current	48	A
I_CM	Pulse Collector Current	192	A
I_LM	Clamped Inductive Load Current	192	A
I_F @ T_C = 160°C	Diode Continous Forward Current	8.0	A
I_FSM	Diode Non Repetitive Peak Surge Current @ T_J = 25°C	175	A
I_FM	Diode Peak Repetitive Forward Current	16	A
V_GE	Continuous Gate-to-Emitter Voltage	±20	V
V_GE	Transient Gate-to-Emitter Voltage	±30	V
P_D @ T_C = 25°C	Maximum Power Dissipation	330	W
P_D @ T_C = 100°C	Maximum Power Dissipation	170	W
T_J T_STG	Operating Junction and Storage Temperature Range	-55 to +175	°C
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)	°C
	Mounting Torque, 6-32 or M3 Screw	10 lbf·in (1.1 N·m)

GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR

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