Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
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Drain-Source Voltage: | -30 V | Gate-Source Voltage: | ±20 V |
---|---|---|---|
Operating And Storage Temperature: | -65 To 150 °C | Package: | SOT-223 |
Highlight: | power mosfet ic,multi emitter transistor |
NDT456P P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol | Parameter | NDT456P | Units |
VDSS | Drain-Source Voltage | -30 | V |
VGSS | Gate-Source Voltage | ±20 | V |
ID |
Drain Current - Continuous (Note 1a) - Pulsed |
±7.5 | A |
±20 | A | ||
PD |
Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) |
3 | W |
1.3 | W | ||
1.1 | W | ||
TJ ,TSTG | Operating and Storage Temperature Range | -65 to 150 | °C |
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