Anterwell Technology Ltd.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
Payment & Shipping Terms:
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| Drain-source Voltage: | 75 V | Drain-gate Voltage: | 75 V |
|---|---|---|---|
| Gate-source Voltage: | ± 20 V | Peak Diode Recovery Voltage Slope: | 12 V/ns |
| Single Pulse Avalanche Energy: | 700 MJ | Operating Junction & Storage Temperature: | -55 To 175 °C |
| High Light: | multi emitter transistor,silicon power transistors |
||
STB75NF75
STP75NF75 - STP75NF75FP
N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP -
D2PAK STripFET™ II Power MOSFET
General features
| Type | VDSS | RDS(on) | ID |
| STB75NF75 | 75V | <0.011Ω | 80A(1) |
| STP75NF75 | 75V | <0.011Ω | 80A(1) |
| STP75NF75FP | 75V | <0.011Ω | 80A(1) |
1. Current limited by package
■ Exceptional dv/dt capability
■ 100% avalanche tested
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
Applications
■ Switching application
Absolute maximum ratings
| Symbol | Parameter | Value | Unit | |
| D2PAK /TO-220 | TO-220FP | |||
| VDS | Drain-source voltage (VGS = 0) | 75 | V | |
| VDGR | Drain-gate voltage (RGS = 20KΩ) | 75 | V | |
| VGS | Gate-source voltage | ± 20 | V | |
| ID (1) | Drain current (continuous) at TC = 25°C | 80 | 80 | A |
| ID (1) | Drain current (continuous) at TC = 100°C | 70 | 70 | A |
| IDM(2) | Drain current (pulsed) | 320 | 320 | A |
| PTOT | Total dissipation at TC = 25°C | 300 | 45 | W |
| Derating factor | 2.0 | 0.3 | W/°C | |
| dv/dt (3) | Peak diode recovery voltage slope | 12 | V/ns | |
| EAS (4) | Single pulse avalanche energy | 700 | mJ | |
| VISO | Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) | -- | 2000 | V |
|
TJ Tstg |
Operating junction temperature Storage temperature |
-55 to 175 | °C | |
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
4. Starting TJ = 25°C, ID = 40A, VDD = 37.5V
Internal schematic diagram
Stock Offer (Hot Sell)
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