Home Products Power Mosfet Transistor

NTR2101PT1G Power Mosfet Transistor Program ic Chip Memory IC

All Products

Integrated Circuit Chip (632)

Programmable IC Chips (288)

Circuit Board Chips (274)

Rectifier Diode (507)

Power Mosfet Transistor (461)

3 Pin Transistor (233)

RJ45 Ethernet Jack (15)

Pressure Sensor IC (52)

Mosfet Power Module (69)

SMD Ferrite Bead (111)

SMD LED Diode (39)

SMD Resistors (28)

Electronic IC Chips (511)

Electronics Components (206)

Best Products

High Power Mosfet Transistors

RF Power Mosfet Transistors

NPN General Purpose Transistor

Good quality Programmable IC Chips for sales

We have cooperate with Anterwell near 7 years. always very good quality good service. Original and very fast delivery. A very good partner.

—— Clemente From Brzail

I'm doing business with Anterwell from 2006, from small to big orders. Reliable!

—— Ingalill From Sweden

Sharon is a very good girl, we are very happy to cooperate with her. Competitive price and professional. Never have quality problem with them.

—— Alfredo From USA

We always buy XILINX parts from Anterwell. High quality with good price. Hope can have more business with you.

—— Mr Babak From Iran

I'm Online Chat Now

NTR2101PT1G Power Mosfet Transistor Program ic Chip Memory IC

: Large Image : NTR2101PT1G Power Mosfet Transistor Program ic Chip Memory IC

Product Details:

Place of Origin:	Malaysia
Brand Name:	ON
Certification:	Original Factory Pack
Model Number:	NTR2101PT1G

Payment & Shipping Terms:

Minimum Order Quantity:	100pcs
Price:	Negotiation
Packaging Details:	3000/REEL
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	30000PCS

Contact Now

Detailed Product Description

Temperature Range:	–40°C To +125°C	Payment Term:	T/T, Paypal, Western Union
Voltage:	1.8V/2.5V/4.5V	Current:	3.7A
Package:	SOT-23	Factory Package:	3000/REEL
Highlight:	power mosfet ic , silicon power transistors

Small Signal MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23

Features

• Leading Trench Technology for Low RDS(on)

• −1.8 V Rated for Low Voltage Gate Drive

• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)

• Pb−Free Package is Available

Applications

• High Side Load Switch

• DC−DC Conversion

• Cell Phone, Notebook, PDAs, etc.

ABSOLUTE MAXIMUM RATINGS(1)

Drain−to−Source Voltage VDSS −8.0 V

Gate−to−Source Voltage VGS ±8.0 V

Continuous Drain Current (Note 1) t ≤ 10 s TA = 25°C ID −3.7 A TA = 70°C −3.0

Power Dissipation (Note 1) t ≤ 10 s PD 0.96 W

Pulsed Drain Current tp = 10 s IDM −11 A

Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C

Source Current (Body Diode) IS −1.2 A

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C

PART OF STOCK

TRANS. FDS9435A	1500	FSC	15+	SOP-8
DIODO MMBD4148,215	300000	NXP	15+	SOT23-3
C.I L7805CD2T-TR	2500	ST	14+	D2PAK
FDS6990A	1500	FSC	15+	SOP-8
NDS9952A	1500	FSC	15+	SOP-8
SN65HVD485EDR	1500	TI	16+	SOP-8
SMBJ8.5CA	7500	VISHAY	16+	SMB
PIC24FJ16GA004-I/PT	1500	MICROCHIP	13+	TQFP-44
C.I TLC072CDGNR	5000	TI	05+	MSOP-8
C.I SN74LS374N	2000	TI	15+	DIP-20
TRANS. BC817-16LT1G	300000	ON	12+	SOT-23
C.I TL074CN	1000	TI	12+	DIP-14
OPTOACOPLADOR MOC3063SM	20000	FSC	14+	SOP-6
TRIAC BT151-500R	300000	NXP	16+	TO-220
C.I MM74HC164MX	25000	FSC	05+	SOP-14
C.I WS79L05	100000	WS	16+	TO-92
RES RL1206FR-070R75L	100000	YAGEO	16+	SMD1206
RES RC1206FR-071R5L	500000	YAGEO	16+	SMD1206
RES RC1206FR-071R2L	500000	YAGEO	16+	SMD1206
RES RL1206FR-070R68L	1000000	YAGEO	16+	SMD1206
RES RC0402FR-0722KL	3000000	YAGEO	16+	SMD0402
RES RC0402FR-0756RL	2000000	YAGEO	16+	SMD0402
RES RC0402FR-0724RL	2000000	YAGEO	16+	SMD0402
RES RC1206JR-072ML	500000	YAGEO	16+	SMD1206
CAP 1206 22PF 1KV NP0 CL31C220JIFNFNE	600000	SAMSUNG	16+	SMD1206

NTR2101PT1G Power Mosfet Transistor Program ic Chip Memory IC

Tag:

mosfets irf3205,

power mosfet ic,

silicon power transistors

Contact Details

Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-23616356

Fax: 86-755-23617396

Other Products

MJE15030G 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS

VEB: 5.0Vdc
IB: 2.0Adc
TJ: −65 to +150 °C
Tstg: −65 to +150 °C

1N4148 FAST SWITCHING DIODE power rectifier diode high voltage rectifier diode

Non-Repetitive Peak Reverse Voltage: 100 V
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage: 75V
RMS Reverse Voltage: 53V
Thermal Resistance, Junction to Ambient Air (Note 1): 300 K/W

1.5KE7.5CA 1500W Axial Lead Transient Voltage uppressors - 6.8V-440V high voltage

Peak power dissipation: 1500W
Steady state power dissipation: 6.5W
Peak forward surge current: 200A
Maximum instantaneours forward voltage: -55~+150℃

BTS134D Smart Low Side Power Switch electronic chip board

VDS: 42 V
Vbb(SC): 42V
VIN: -0.2 2) ... +10V
Tj: -40 ...+150 °C

TCMT4100 Optocoupler with Phototransistor Output general purpose mosfet

VR: 6V
Ptot: 250mW
Tstg: –40 to +100°C
Tsd: 235°C