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CM400DY-24NF Mosfet Power Module IGBT Modules High Power Switching Use

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CM400DY-24NF Mosfet Power Module IGBT Modules High Power Switching Use

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Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	CM400DY-24NF

Payment & Shipping Terms:

Minimum Order Quantity:	2pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	1100pcs

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Detailed Product Description

Collector-emitter Voltage:	1200 V	Gate-emitter Voltage:	±20 V
Maximum Collector Dissipation:	1470 W	Junction Temperature:	–40 ~ +150°C
Storage Temperature:	–40 ~ +125°C	Isolation Voltage:	2500 Vrms
Highlight:	thyristor diode module , hybrid inverter circuit

MITSUBISHI IGBT MODULES CM400DY-24NF

HIGH POWER SWITCHING USE

CM400DY-24NF Mosfet Power Module IGBT Modules High Power Switching Use

I_C .......................................400A
V_CES ................................ 1200V
Insulated Type
2-elements in a pack

APPLICATION

General purpose inverters & Servo controls, etc

MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol	Parameter	Conditions	Ratings	Unit
V_CES	Collector-emitter voltage	G-E Short	1200	V
V_GES	Gate-emitter voltage	C-E Short	±20	V
I_C	Collector current	DC, T_C’ = 111°C^*3	400	A
I_CM	Collector current	Pulse (Note 2)	800	A
I_E (Note 1)	Emitter current		400	A
I_EM (Note 1)	Emitter current	Pulse (Note 2)	800	A
P_C (Note 3)	Maximum collector dissipation	T_C = 25°C	1470	W
Tj	Junction temperature		–40 ~ +150	°C
Tstg	Storage temperature		–40 ~ +125	°C
Viso	Isolation voltage	Terminals to base plate, f = 60Hz, AC 1 minute	2500	Vrms
-	Torque strength	Main terminals M6 screw	3.5 ~ 4.5	N • m
-	Torque strength	Mounting M6 screw	3.5 ~ 4.5	N • m
-	Weight	Typical value	580	g

*1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.

*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

*3 : Case temperature (Tc’) measured point is just under the chips.

If you use this value, Rth(f-a) should be measured just under the chips.

Note

1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

OUTLINE DRAWING & CIRCUIT DIAGRAM

CM400DY-24NF Mosfet Power Module IGBT Modules High Power Switching Use

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