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SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

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SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

: Large Image : SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	SGP02N120

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	8300pcs

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Detailed Product Description

Collector-emitter Voltage:	1200 V	DC Collector Current:	6.2 A
Pulsed Collector Current:	9.6 A	Gate-emitter Voltage:	±20 V
Power Dissipation:	62 W	Operating Junction And Storage Temperature:	-55...+150°C
Highlight:	power mosfet ic , multi emitter transistor

SGP02N120, SGB02N120, SGD02N120

Fast S-IGBT in NPT-technology

• 40% lower E_off compared to previous generation

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

- SMPS

• NPT-Technology offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	1200	V
DC collector current T_C = 25°C T_C = 100°C	I_C	6.2 2.8	A
Pulsed collector current, t_p limited by T_jmax	I_Cpuls	9.6	A
Turn off safe operating area V_CE ≤ 1200V, T_j≤ 150°C		9.6	A
Gate-emitter voltage	V_GE	±20	V
Avalanche energy, single pulse I_C = 2A, V_CC = 50V, R_GE = 25Ω, start at T_j = 25°C	E_AS	10	mJ
Short circuit withstand time¹⁾ V_GE = 15V, 100V ≤ V_CC ≤ 1200V, T_j ≤ 150°C	t_SC	10	µs
Power dissipation T_C = 25°C	P_tot	62	W
Operating junction and storage temperature	Tj , Tstg	-55...+150	°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s		260	°C

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