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IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching

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IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching

: Large Image : IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	IRLL024NTRPBF

Payment & Shipping Terms:

Minimum Order Quantity:	10pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	10000pcs

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Detailed Product Description

Pulsed Drain Current:	12 A	Linear Derating Factor:	8.3 MW/°C
Gate-to-Source Voltage:	±16 V	Single Pulse Avalanche Energy:	120 MJ
Avalanche Current:	3.1 A	Junction And Storage Temperature:	-55 To + 150 °C
Highlight:	multi emitter transistor , silicon power transistors

IRLL024NPbF HEXFET® Power MOSFET

Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D @ T_A = 25°C	Continuous Drain Current, V_GS @ 10V**	4.4	A
I_D @ T_A = 25°C	Continuous Drain Current, V_GS @ 10V*	3.1	A
I_D @ T_A = 70°C	Continuous Drain Current, V_GS @ 10V*	2.5	A
I_DM	Pulsed Drain Current	12	A
P_D @T_A = 25°C	Power Dissipation (PCB Mount)**	2.1	W
P_D @T_A = 25°C	Power Dissipation (PCB Mount)*	1.0	W
	Linear Derating Factor (PCB Mount)*	8.3	mW/°C
V_GS	Gate-to-Source Voltage	± 16	V
E_AS	Single Pulse Avalanche Energy	120	mJ
I_AR	Avalanche Current	3.1	A
E_AR	Repetitive Avalanche Energy*	0.1	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J, T_STG	Junction and Storage Temperature Range	-55 to + 150	°C

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching

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TL431CLPRPG	17618	ON	10+	TO-92
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TL750L05CLP	7696	ST	10+	TO-92
PXT2222A	15674	NXP	16+	TO-89
STRX6757	2324	SANKEN	16+	TO3P-7
STRX6769	1421	SANKEN	16+	TO3P-7
STR30130	13928	SK	16+	TO3P-5
STD03P/STD03N	1000	SANKEN	14+	TO-3P-4
SSH22N50A	12510	FSC	13+	TO-3P
TIP35C	18012	KEC	16+	TO-3P
S30D45C	2940	MOSPEC	16+	TO-3P
SSH40N20	17268	SEC	16+	TO-3P
SGL160N60UFD	1439	FAIRCHILD	14+	TO-264
SPX29152T5-L	7756	EXAR	06+	TO-263-5
SP1086V1-L-3-3/TR	7516	SIPEX/EXA	10+	TO-263-3L
LT1963E#PBF	1652	LINEAR	15+	TO-263/5
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