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2N5486 Power Mosfet Transistor N-Channel RF Amplifier N-CHANNEL JFETS

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2N5486 Power Mosfet Transistor N-Channel RF Amplifier N-CHANNEL JFETS

: Large Image : 2N5486 Power Mosfet Transistor N-Channel RF Amplifier N-CHANNEL JFETS

Product Details:

Place of Origin:	original factory
Brand Name:	Anterwell
Certification:	new & original
Model Number:	2N5486

Payment & Shipping Terms:

Minimum Order Quantity:	20pcs
Price:	Negotiate
Packaging Details:	Please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union, Paypal
Supply Ability:	100000pcs

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Detailed Product Description

Drain-Gate Voltage:	25 V	Gate-Source Voltage:	- 25 V
Forward Gate Current:	10 MA	Operating And Storage Junction Temperature:	-55 To +150 °C
Total Device Dissipation:	350 MW	Thermal Resistance, Junction To Ambient:	357 °C/W
Highlight:	power mosfet ic , silicon power transistors

2N5484 MMBF5484

2N5485 MMBF5485

2N5486 MMBF5486

2N5486 Power Mosfet Transistor N-Channel RF Amplifier N-CHANNEL JFETS

N-Channel RF Amplifier

This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

Absolute Maximum Ratings* T_A = 25°C unless otherwise noted

Symbol	Parameter	Value	Units
V_DG	Drain-Gate Voltage	25	V
V_GS	Gate-Source Voltage	-25	V
I_GF	Forward Gate Current	10	mA
T_J ,T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

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