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FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet

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FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet

: Large Image : FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet

Product Details:

Place of Origin:	Original
Brand Name:	FAIRCHILD
Certification:	Original Factory Pack
Model Number:	FDN304PZ

Payment & Shipping Terms:

Minimum Order Quantity:	50pcs
Price:	negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	5200PCS

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Detailed Product Description

Drain-Source Voltage:	–20 V	Gate-Source Voltage:	±8 V
Operating And Storage Junction Temperature Range:	–55 To +150 °C	ID:	–2.4 A
Thermal Resistance, Junction-to-Ambient (Note 1a):	250 °C/W
Highlight:	multi emitter transistor , silicon power transistors

– Pulsed FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET switching power mosfet

FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet Features ·

► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V

► Fast switching speed

► ESD protection diode

► High performance trench technology for extremely low RDS(ON)

► SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

Applications

►Battery management

►Load switch

► Battery protection

General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Absolute Maximum Ratings

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	–20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current – Continuous – Pulsed	–2.4 -10	A
TJ, TSTG	Operating and Storage Junction Temperature Range	–55 to +150	°C

FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet

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