K5A3281CTM-D755 MCP MEMORY Lg Tv Ic Price Digital Ic Circuits

K5A3281CTM-D755 MCP MEMORY lg tv ic price digital ic circuits

FEATURES

· Power Supply voltage : 2.7V to 3.3V

· Organization

- Flash : 4,194,304 x 8 / 2,097,152 x 16 bit

- SRAM : 1,048,576 x 8 / 524,288 x 16 bit

· Access Time (@2.7V)

- Flash : 70 ns, SRAM : 55 ns

· Secode(Security Code) Block : Extra 64KB Block (Flash)

· Block Group Protection / Unprotection (Flash)

· Flash Bank Size : 8Mb / 24Mb , 16Mb / 16Mb

· Flash Endurance : 100,000 Program/Erase Cycles Minimum · SRAM Data Retention : 1.5 V (min.)

· Industrial Temperature : -40°C ~ 85°C · Package : 69-ball TBGA Type - 8 x 11mm, 0.8 mm pitch 1.2mm(max.) Thickness

GENERAL DESCRIPTION

The K5A3x80YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which combines 32Mbit Dual Bank Flash and 8Mbit fCMOS SRAM.

The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit and 8Mbit SRAM is organized as 1M x8 or 512K x16 bit. The memory architecture of flash memory is designed to divide its memory arrays into 71 blocks and this provides highly flexible erase and program capability. This device is capable of reading data from one bank while programming or erasing in the other bank with dual bank organization

The Flash memory performs a program operation in units of 8 bits (Byte) or 16 bits (Word) and erases in units of a block. Single or multiple blocks can be erased. The block erase operation is completed for typically 0.7sec.

The 8Mbit SRAM supports low data retention voltage for battery backup operation with low data retention current.

The K5A3x80YT(B)C is suitable for the memory of mobile communication system to reduce mount area. This device is available in 69-ball TBGA Type package.

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