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multi emitter transistor

(458)

Surface mount Si-Epitaxial PlanarTransistors BCP53
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Power dissipation Verlustleistung 1.3 W Plastic case SOT-223 Kunststoffgehuse Weight approx. Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehusematerial UL94V-0 klassifiziert Standard ... Read More

2017-12-07 11:09:22

STGW20NC60VD power mosfet module N-CHANNEL Very Fast PowerMESH IGBT
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STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT General Features TYPE VCES VCE(sat) (Max) @25C IC @100C STGW20NC60VD 600 V < 2.5 V 30 A OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE ... Read More

2017-12-07 11:10:45

MGP20N40CL Smartdiscretes Internally Clamped N Channel Igbt Switching Power Mosfet
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MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT switching power mosfet low power mosfet This Logic Level Insulated Gate Bipolar Transistor (IGBT) features GateEmitter ESD protection, GateCollector ... Read More

2017-12-07 11:09:54

MJD41CT4G high voltage dual complementary power mosfet for general purpose amplifier
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MJD41CT4G high voltage dual complementary power mosfet for general purpose amplifier DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features ... Read More

2017-12-07 11:09:43

PS2805C-1-F3-A HIGH ISOLATION VOL TAGE AC INPUT circuit board ic
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PS2805C-1-F3-A HIGH ISOLATION VOL TAGE AC INPUT circuit board ic FEATURES High isolation voltage (BV = 2 500 Vr.m.s.) Small and thin package (4, 16-pin SSOP, Pin pitch 1.27 mm) High collector to emitter voltage ... Read More

2017-12-07 11:10:02

MJF122G COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W high voltage power mosfet dual power mosfet
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Complementary Power Darlingtons For Isolated Package Applications Designed for generalpurpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically ... Read More

2017-12-07 11:09:40

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